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An integrated low-noise amplifier and downconversion mixer operating at 1 GHz has been fabricated for the first time in 1 /spl mu/m CMOS. The overall conversion gain is almost 20 dB, the double-sideband noise figure is 3.2 dB, the IIP3 is +8 dBm, and the circuit takes 9 mA from a 3 V supply. Circuit design methods which exploit the features of CMOS well suited to these functions are in large part responsible for this performance. The front-end is also characterized in several other ways relevant to direct-conversion receivers.
Rofougaran et al. (Mon,) studied this question.