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We use scanning tunneling microscopy to investigate the reactivity of the dangling-bond states of Si (111) - (77). The reaction with NH₃ is used as a prototype. We find that Si rest atoms are more reactive than Si adatoms and that center adatoms are more reactive than corner adatoms. Using atom-resolved electronic spectra, we probe the dangling-bond states on both clean and NH₃-exposed surfaces. We find significant interactions and charge transfer between sites which strongly influence surface reactivity.
Wolkow et al. (Mon,) studied this question.