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by introducing two defect levels of 2.83 eV and 4.89 eV within the band gap of the KDP crystal. To further investigate the effect of intrinsic defects introduced by lateral cracks on laser-induced damage growth, the transformation of charge states of intrinsic defects under laser irradiation was calculated. Combined with the spectral information of the lateral crack-induced laser damage site and the laser damage growth experiments, it was found that the intrinsic defects of lateral cracks have a large amount of evolution, making the crystal prone to severe damage growth. Overall, the avoidance of such lateral cracks with a large number of intrinsic defects is very beneficial for improving the laser damage resistance of KDP crystals.
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Ding et al. (2022) studied this question.
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