Electroforming-free nonvolatile resistive switching of redox-exfoliated MoS ₂ nanoflakes loaded polystyrene thin film with synaptic functionality

Here, we report robust and highly reproducible nonvolatile resistive switching (RS) devices with artificial synaptic functionalities utilizing redox-exfoliated few-layered 2H-MoS 2 nanoflakes. Advantageous polar solvent compatibility of 2D MoS 2 from this method were utilized to fabricate thin film devices very easily and cost-effectively using polystyrene as matrix. Prominent RS property of polystyrene thin film devices with varying MoS 2 concentrations strongly favors electroforming-free operation. The conduction band position of 2D MoS 2 nanosheet in combination with the work functions of chosen electrodes looks alleviating to switch the current from low to high at a suitable positive bias voltage. We further confirmed the mechanism of charge transport through fitting the results with theoretical models, say injection-dominated Schottky emission model for low-conducting states and space-charge-limited current mechanism for the high-conducting state. Interestingly, a relatively high current On/Off ratio 10 2 was recorded during the pump-probe testing to show resistive random-access memory (ReRAM) application. Finally, artificial synaptic functionalities- the building blocks of neuromorphic computing architectures is also illustrated by considering the robust RS property and ReRAM application.