Fabricating Molybdenum Disulfide Memristors

Memristors with simple two-terminal structures have great potential for use in high-density memory and neuromorphic devices. Many neuromorphic behaviors can be imitated using a two-terminal device. Molybdenum disulfide (MoS2) is a two-dimensional (2D) semiconductor ideal for use as the resistive switching layer in memristor applications. Compared with traditional transition metal oxides, 2D MoS2 memristors have ultrathin thickness, good flexibility, high transparence, and tunable characteristics. Because of the extensive research in this field in recent years, many methods for synthesizing large-area (4–6 in.) monolayer MoS2 have been investigated, one of the most promising being chemical vapor deposition. In this Review, the characteristics of MoS2 will first be introduced. Thereafter, methods related to the growth and fabrication of MoS2, such as mechanical exfoliation, solution-based synthesis, and vacuum processes, will be reviewed. Moreover, memristors based on MoS2 will be divided and introduced according to the resistance switching mechanisms. Finally, we will conclude by discussing the challenges and perspectives related to MoS2 memristors.