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• Silicon carbide on insulator for integrated photonics. • Nonlinear optics in silicon carbide on insulator. • Quantum photonics and spin to photon interface. • Single photon and entangled photon sources in silicon carbide on insulator. Silicon carbide (SiC) integrated photonics is advancing rapidly, promising to overcome the limitations of other integrated photonics platforms and enable new quantum devices. This progress is driven by SiC’s exceptional optical properties and significant advancements in epitaxial growth technologies, enabling wafer-scale production and manufacturability. The development of photonic components in SiC and SiC on Insulators at the wafer scale marks a paradigm shift in the role of SiC in photonics, a field dating back over 20 years. These advancements are seamlessly incorporating SiC into both integrated photonics and the emerging quantum photonics sector. SiC’s wide bandgap, high thermal conductivity, and robust nonlinear optical response make it ideal for a range of applications, from resilient photonic circuits in harsh environments to quantum devices that could revolutionize computing and communication. As research progresses, SiC-integrated photonics is poised to deliver cutting-edge, energy-efficient, and high-performance solutions that align with the goals of a sustainable and technologically advanced future.
Boretti et al. (Fri,) studied this question.