A new method in making single crystals of GaP and the preparation of diodes is described. The p-n luminescence and photoluminescence of undoped and Zn-doped GaP are investigated and the light output of the p-n luminescence as a function of temperature and excitation density is discussed. The spectral sensitivity of the p-n photovoltaic effect is recorded.
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Grimmeiss et al. (1961) studied this question.
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