Photo- and Nanoelectronics Based on Two-Dimensional Materials. Part I. Two-Dimensional Materials: Properties and Synthesis

We review the synthesis methods, crystal parameters, and band structure of two-dimensional and quasi-two-dimensional materials, including graphene; group IV‒VIII transition metal dichalcogenides; 2D binary chalcogenides A^IVB^VI , Aₘ^IVBₙ^VI , A^IIIB^VI , Aₘ^IIIBₙ^VI , and A^IIB^VI of group IV, III, and II transition metals; Ti, Zr, Hf, Bi, and Sb trichalcogenides; A^VB^V (AsN, AsP, PN, SbAs, SbN, SbP) 2D materials; A^IIIN (A = Al, Ga, In, B) 2D nitrides; monoatomic 2D materials (phosphorene P, plumbene Pb, stanene Sn, germanene Ge, silicene Si, antimonene Sb, arsenene As, bismuthene Bi, borophene B, and octo-nitrogene 8‑N); functionalized graphene and silicon carbide SiC; CO, GeO, and SnO 2D oxides; 2D transitional metal dioxides, Ge, and Sn; 2D trioxides MoO3 and WO3; and transition metal di- and trihalides.