Characterization of schottky depletion zone using EBIC imaging

Scanning Electron Microscopy (SEM) has been widely used to characterize semiconductor materials. Approximately one half of all SEMs are used by the electronic industry. The SEM can be used as a local current source that can be scanned over semiconductor device surfaces. This imaging mode is called Electron Beam Induced Current (EBIC). A depletion zone formed by a Schottky diode is visualized using this technique. This Shottky diode is fabricated by placing a metal contact on a semiconductor surfaces. The work function of the metal and the semiconductor produce an equilibrium contact potential. This potential barrier occurs across a region free of charge carriers and thus an electric field is present. This region is called a depletion zone.