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A high speed and low loss silicon optical modulator based on carrier depletion has been made using an original structure consisting of a p-doped slit embedded in the intrinsic region of a lateral pin diode. This design allows a good overlap between the optical mode and carrier density variations. Insertion loss of 5 dB has been measured with a contrast ratio of 14 dB for a 3 dB bandwidth of 10 GHz.
Marris‐Morini et al. (Tue,) studied this question.