ABSTRACT Wide‐bandgap amorphous oxide semiconductors (AOSs), particularly indium‐gallium‐zinc‐oxide (IGZO), offer ultralow off‐current and back‐end‐of‐line compatibility, making them attractive for advanced dynamic random access memory (DRAM). In capacitor‐less two‐transistor (2T0C) DRAM, dual‐gate (DG) a‐IGZO TFTs are promising read transistors, but achieving a stable positive threshold voltage (V th ) typically reduces field‐effect mobility (µ FE ) and increases contact resistance (R C ), limiting fast operation. This study introduces a spatially selective laser annealing strategy that overcomes this limitation in a single step. The steep thermal gradient promotes oxygen incorporation at the top‐gate dielectric/channel interface, passivating defects without severely depleting carrier density. Simultaneously, WO x interlayer removal combined with oxygen redistribution forms conductive n + regions at source/drain contacts. This dual modification stabilizes the channel and reduces R C , enabling both high µ FE (37.9 cm 2 V −1 s −1 ) and a stable positive V th (0.27 V). The optimized devices exhibit small ΔV th under bias stress and reliable operation, demonstrating the read function of 2T0C DRAM, maintaining stable “0/1” state discrimination and wide memory windows (>10 5 ) for over 10 000 s. This single‐step process provides a practical route to overcome the performance‐stability trade‐off in AOS TFTs, highlighting strong potential for emerging memory applications.
권시현 et al. (Thu,) studied this question.