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Accelerating proton transfer has been demonstrated as key to boosting water oxidation on semiconductor photoanodes. Herein, we study proton-coupled electron transfer (PCET) of water oxidation on five typical photoanodes i.e., α-Fe 2 O 3, BiVO 4, TiO 2, plasmonic Au/TiO 2, and nickel–iron oxyhydroxide (Ni 1– x Fe x OOH)-modified silicon (Si) by combining the rate law analysis of H 2 O molecules with the H/D kinetic isotope effect (KIE) and operando spectroscopic studies. An unexpected and universal half-order kinetics is observed for the rate law analysis of H 2 O, referring to a sequential proton–electron transfer pathway, which is the rate-limiting factor that causes the sluggish water oxidation performance. Surface modification of the Ni 1– x Fe x OOH electrocatalyst is observed to break this limitation and exhibits a normal first-order kinetics accompanied by much enhanced H/D KIE values, facilitating the turnover frequency of water oxidation by 1 order of magnitude. It is the first time that Ni 1– x Fe x OOH is found to be a PCET modulator. The rate law analysis illustrates an effective strategy for modulating PCET kinetics of water oxidation on semiconductor surfaces.
Liu et al. (Fri,) studied this question.