Measurement of the conduction-band discontinuity of molecular beam epitaxial grown In0.52Al0.48As/In0.53Ga0.47As, N-n heterojunction by C-V profiling

We report the first measurement of the conduction-band discontinuity ΔEc for molecular beam epitaxial grown N-n In0.52Al0.48As/In0.53Ga0.47As heterojunction using the C-V profiling technique outlined by Kroemer et al. We find ΔEc=(0.50±0.05) eV @297 K corresponding to (71±7)% ΔEg. An interface charge density σi of (4.0±0.8)×1011 cm−2 was also obtained. A knowledge of ΔEc is of importance for quantifying carrier confinement in double heterostructure lasers fabricated from these ternary compounds.