Selective nanoscale growth of titanium on the Si(001) surface using an atomic hydrogen resist

Nanoscale titanium structures are fabricated on a patterned Si(001)-(2×1) surface using an atomic hydrogen resist. The patterning is achieved by removing small areas of hydrogen with a scanning tunneling microscope. The large chemical reactivity of the bare Si surface compared to the hydrogen passivated surface provides selective area growth of titanium clusters grown by chemical vapor deposition using TiCl4. Titanium growth by chemical vapor deposition is normally limited by chlorine passivation of the bare Si surface. However, by removing the chlorine with the scanning tunneling microscope, the growth can be resumed.