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The aluminum gallium nitride (AlGaN) /AlN/ sapphire-based solar-blind metal-semiconductor–metal (MSM) photodetectors are highly valued for applications that require mechanical and thermal stability under varying environmental conditions due to advantages over bulky and fragile photomultipliers, including lightweight design, low energy consumption, and high durability. Thus, this study demonstrates the critical analysis of the fabrication and characterization of AlGaN-based solar-blind MSM photodetector. The high crystalline quality i. e. , average threading dislocation density ~10. 8/cm2 and rms roughness ~621 pm for2 2~ {m^2}area effectively suppresses the leakage (dark) current to65. 2 10^-{12}A at 5 V. Under 255 nm illumination, the photocurrent reaches to 4 10^-{6}A at 5 V, which is approximately five orders of magnitude higher than the dark current. The photodetector demonstrates exceptional performance metrics, including the high responsivity of ~13 A/W, ultraviolet to visible rejection ratio of1. 3 10^{3}, and the detection rate of3 10^{11}Jones at 5 V, surpassing many recently reported devices. Furthermore, it exhibits an ultrafast temporal response, with rise and fall times of ~24 and 23~ s, respectively.
Choubey et al. (Tue,) studied this question.