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GaBiAs layers have been grown by molecular beam epitaxy at low (270–330°C) temperatures and were characterized by several experimental techniques. It was shown that the spectral photosensitivity cutoff wavelength reaches ∼1.4μm when the growth temperature is as low as 280°C. Optical pump–terahertz probe measurements made on these layers have evidenced that the electron trapping time decreases with decreasing growth temperature from 20 to about 1ps. GaBiAs layers were used for manufacturing photoconductive terahertz emitters and detectors, which, when excited with Ti:sapphire laser pulses, have demonstrated a signal bandwidth of 3THz.
Bertulis et al. (Mon,) studied this question.