Ion-implanted In0.53Ga0.47As for ultrafast optoelectronic applications

Undoped In0.53Ga0.47As epilayers were implanted with 2-MeV Fe+ ions at doses of 1×1015 and 1×1016 cm−2 at room temperature and annealed at temperatures between 500 and 800 °C. Hall-effect measurements show that after annealing, layers with resistivities on the order of 105 Ω/square can be achieved. Carrier lifetimes as short as 300 fs are observed for samples annealed at 500 and 600 °C. For higher annealing temperatures, characteristic times of the optical response are on the order of a few picoseconds.