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This work aims to enhance radiative emission from germanium layers using all-dielectric metasurfaces on silicon substrates.

Strong Photoluminescence Enhancement in All‐Dielectric Ge Thin Film Metasurfaces for Integration on the Si Platform

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Randomized trial demonstrates strong photoluminescence enhancement in germanium metasurfaces, indicating potential for silicon photonic applications.

This work aims to enhance radiative emission from germanium layers using all-dielectric metasurfaces on silicon substrates.
Utilized germanium all-dielectric metasurfaces on silicon-on-insulator substrates
Conducted power dependence analysis of photoluminescence
Performed full-wave simulations to study spectral intensity and multipole modes
Photoluminescence intensity enhanced by ∼40× compared to unstructured films
Dominant emission mechanism identified as direct band-to-band recombination
Spectral intensity tailored by nanostructuring with respect to wavelength, polarization, and directivity

Schlipf et al. (2026) studied this question.

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Randomized trial demonstrates strong photoluminescence enhancement in germanium metasurfaces, indicating potential for silicon photonic applications.