What question did this study set out to answer?

This research aims to improve the performance of homo-channel CMOS using a tunable doping strategy in monolayer WSe2.

August 2, 2026Advanced Functional MaterialsOpen Access

Tunable Complementary Doping Strategy Enables High‐Performance Homo‐Channel CMOS in Monolayer WSe 2

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Authors

KCKuan‐Hsiang ChiuNational Yang Ming Chiao Tung University WWWen-Chia WuTaiwan Semiconductor Manufacturing Company (Taiwan)HCHis-Yu ChenNational Yang Ming Chiao Tung University

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Implication

Randomized trial demonstrates enhanced performance in CMOS using tunable doping strategies in monolayer WSe2, highlighting implications for energy-efficient electronics.

Key Points

This research aims to improve the performance of homo-channel CMOS using a tunable doping strategy in monolayer WSe2.
Demonstrated n-type modulation using AlN and p-type behavior via MoOx for polarity control.
Conducted doping strength adjustments through deposition conditions and post-annealing.
Integrated both n-type and p-type transistors into a single monolayer WSe2 channel.
AlN-modulated n-FETs showed a 2-3 order of magnitude increase in current density and a low contact resistance of ∼1 kΩ·µm.
MoOx-modulated p-FETs achieved current densities exceeding 400 µA/µm.
Homo-channel CMOS inverters displayed high noise margins (∼80%-90% of VDD) and low static power consumption of ∼0.1-10 pW.

Cite This Study

Chiu et al. (2026) studied this question.

synapsesocial.com/papers/6a6eeb201b0468a7eeab4035 https://doi.org/10.1002/adfm.77482

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August 2, 2026Advanced Functional MaterialsOpen Access

Tunable Complementary Doping Strategy Enables High‐Performance Homo‐Channel CMOS in Monolayer WSe 2

View Full Paper

Ask AI

Bookmark

Authors

KCKuan‐Hsiang ChiuNational Yang Ming Chiao Tung University WWWen-Chia WuTaiwan Semiconductor Manufacturing Company (Taiwan)HCHis-Yu ChenNational Yang Ming Chiao Tung University

Discussion

Member takes

Implication

Randomized trial demonstrates enhanced performance in CMOS using tunable doping strategies in monolayer WSe2, highlighting implications for energy-efficient electronics.

Key Points

This research aims to improve the performance of homo-channel CMOS using a tunable doping strategy in monolayer WSe2.
Demonstrated n-type modulation using AlN and p-type behavior via MoOx for polarity control.
Conducted doping strength adjustments through deposition conditions and post-annealing.
Integrated both n-type and p-type transistors into a single monolayer WSe2 channel.
AlN-modulated n-FETs showed a 2-3 order of magnitude increase in current density and a low contact resistance of ∼1 kΩ·µm.
MoOx-modulated p-FETs achieved current densities exceeding 400 µA/µm.
Homo-channel CMOS inverters displayed high noise margins (∼80%-90% of VDD) and low static power consumption of ∼0.1-10 pW.

Cite This Study

Chiu et al. (2026) studied this question.

synapsesocial.com/papers/6a6eeb201b0468a7eeab4035 https://doi.org/10.1002/adfm.77482

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