The annealing behaviour of arsenic-implanted silicon between 600 and 800°C characterized by carrier density profiles

Arsenic ions of 100 keV are implanted into misaligned (111) -silicon crystals with doses of 1 × × 1014, 5 × 1014, 1 × 1015, 5 × 1015, and 1 × 1016 ions/cm2. After 30 min annealing at 600 and 800 °C the carrier density distributions are derived from measurements of Hall effect and sheet conductivity in combination with successive layer stripping. Moreover, proton backscattering spectra for as-implanted silicon and arsenic range distributions obtained by SIMS analysis are used for comparison. The reverse annealing behaviour observed for ion doses equal or greater than 5 × 1014 As+/cm2 is explained as a relaxation to the equilibrium.