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September 18, 2003Applied Physics Letters

Germanium nanowire field-effect transistors with SiO2 and high-κ HfO2 gate dielectrics

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Authors

DWDunwei WangBoston CollegeQWQian WangHuaqiao University
Ali Javey
Ali JaveyCalifornia Institute of Technology

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Wang et al. (2003) studied this question.

synapsesocial.com/papers/6a6f195cf44fa9f079dc7d70https://doi.org/10.1063/1.1611644
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