High‐temperature kinetics of some Si‐ and Cl‐containing ceramic precursors

This article summarizes our recent experimental investigations of high‐temperature kinetics of Si‐ and Cl‐containing precursor molecules relevant to chemical vapor synthesis and ceramic processing. Reaction systems using SiCl 4 and SiHCl 3 highly diluted in argon, which were studied in a shock tube using the combination of thermal pyrolysis and laser flash photolysis methods, are described. In situ concentrations of the atomic species Si, Cl, and H were measured simultaneously using the atomic resonance absorption spectroscopy. The measured properties were sensitive to a limited number of elementary reactions, which could be analyzed in terms of rate coefficients.