Analysis and Optimization of GaN Based Multi-Channels FinFETs

In this work, the design of multi-channels tri-gate AlGaN/GaN high-electron-mobility transistors (HEMTs) is optimized for high-power and high-frequency applications. With a full self-consistent 3D modeling on carrier transport and heating issues, the optimized design of multi-channel AlGaN/GaN layer thickness, modulation doping of channel layer, and fin width are investigated and the influences of self-heating effects had been studied. After a proper design, the performance of experimental work can be further improved. The optimized enhance mode FinFET with four channels shows a 3.2 times higher maximum transconductance compared to the single channel tri-gate device. And the performance of unit current gain frequency also has an improvement in multi-channel FinFETs.