The defect structure of CdS thin films grown by RF sputtering is studied by electrical and positron annihilation measurements after different thermal treatments. It is shown that for annealing temperatures below 475 K desorbed impurities (probably oxygen) cause an increase in both, the carrier mobility and concentration. For annealing temperatures above 475 K, positron annihilation measurements reveal a S-vacancy agglomeration in agreement with the electrical measurements.
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Mártil et al. (1986) studied this question.
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