Stark widths and shifts of singly ionized silicon spectral lines

Stark widths and shifts of Si ii lines from five visible multiplets: (1) 3p²²D-4p²Pᵒ, (2) 4s²S-4p²Pᵒ, (3) 3d²D-4f²Fᵒ, (4) 4p²Pᵒ-5s²S, and (5) 4p²Pᵒ-4d²D, are measured in an electromagnetically driven T tube. Electron density [(0.3-1.4)×{}10¹⁷ cm^-3] is determined by laser interferometry, and from Hβ profiles. Temperature (16000-22000 K) is obtained from the intensity ratios of Si iii and Si ii lines, and from Boltzmann slopes of Ne i lines. Results are compared with other experimental and theoretical data.