We have established a state-of-the-art InGaAs-InAlAs-InP HEMT MMIC fabrication process for millimeter-wave high-power applications. A two-stage monolithic microwave integrated circuit (MMIC) power amplifier with 0.15-μm gate length and 1.28-mm output periphery fabricated using this process has demonstrated an output power of 427 mW with 19% power-added efficiency at 95 GHz. To our knowledge, this is the highest output power ever reported at this frequency for any solid-state MMIC amplifier.
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Chen et al. (1998) studied this question.
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