Polarization-sensitive optical phenomena in thick semiconducting nanowires

For semiconducting nanowires with the dielectric constant ε differing from that of their environment, the distribution of ac electric fields, created in a nanowire by an external lightwave and emitted outside by an effective dipole in a nanowire, is found. The results are used for calculating the spectra and polarization properties of optical absorption, luminescence, and photoconductivity in such nanowires. For relatively thick nanowires, with diameter a comparable to the light wavelength, all polarization characteristics exhibit strong oscillations with the light frequency ω and even change the sign over some intervals of ωa∕c. Some of these phenomena have already been observed experimentally. In a system of randomly oriented nanowires, they result in a polarization memory where polarization of photoluminescence is determined by the polarization of the exciting light, by a factor strongly dependent on the frequencies of both the exciting and emitted light.