Numerical and experimental analyses of two-dimensional electron mobility in Al(In,Ga)N/AlGaN heterostructures

Two-dimensional electron mobilities in AlGaN-channel nitride heterostructures were numerically and experimentally analyzed. The calculation and experimental results indicated that mobility for InAlN/AlGaN heterostructures grown by metalorganic chemical vapor deposition was limited by interface roughness scattering as well as alloy disorder scattering. The mobility limits for AlGaN-channel heterostructures with a two-dimensional electron gas (2DEG) density of 3 × 10 13 /cm 2 were estimated to be, for instance, 249 cm 2 V −1 s −1 for an Al 0.3 Ga 0.7 N channel and 192 cm 2 V −1 s −1 for an Al 0.5 Ga 0.5 N channel. The calculated values showed no major disagreement with the results reported on AlGaN-channel heterostructures.