Sol-gel derived RuO₂-PZT-RuO₂ferroelectric capacitors

There has been a lot of attention on novel oxide electrodes, e. g., RuO2, LaSrCoO3, YBCO, for contacts to ferroelectric capacitors. Such devices were reported to yield fatigue-free behaviors which are crucial for implementation in ferroelectric memory technology. Typical Pt/PZT/Pt capacitors fatigue as fast as after 104 cycles. In this study, sol-gel techniques are used to prepare both conducting RuO2 and PZT 53/47 thin films. Conductivity of the RuO2 films ranged was measured as 5 × 10−4 Ω-cm. Oxidized Si and platinized Si wafers were used as the substrates; Si/ SiO2/RuO2/PZT/RuO2 and Si/SiO2/Pt/RuO2/PZT/RuO2/Pt and Si/SiO2/Pt/PZT/Pt capacitors were obtained. The effect of RuO2 electrode on microstructure, ferroelectric properties and leakage characteristics will be discussed.