Photoluminescence from submicron CaF2:Nd films grown epitaxially on Si(111) and Al(111)/Si(111)

Nd3+ doped CaF2 films have been grown epitaxially on Si(111) and Al(111)/Si(111) using CaF2 and NdF3 evaporation. Photoluminescence spectra from these samples show high intensity and narrow emission linewidth even when the thickness of the CaF2:Nd films is reduced to 0.2 μm. The 10 457 Å emission line is not quenched until the Nd concentration exceeds 3.8 wt.%. Moreover, while similar spectra are observed, the photoluminescence intensity from the CaF2:Nd films grown on Al/Si(111) is significantly higher than from the CaF2:Nd on Si(111).