We present results of an experimental investigation into alteration of the spontaneous emission spectrum of GaAs from within one-dimensional photonic band gap (PBG) structures. The PBG samples are multilayer AlAs/Al0.2{Ga}0.8$As/GaAs p-i-n light-emitting diodes, with layers arranged as a distributed Bragg reflector. The emission spectra normal to the layers are measured, and we use a simple method to model the power spectrum of spontaneous emission from within the structures. We find that the emitted power is enhanced by a factor of 3.5 at the frequencies near the photonic band edge. {} 1996 The American Physical Society.
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