Double-heterostructure AlxGa1−xAs–GaAs– AlxGa1−xAs injection lasers with room-temperature thresholds as low as 2300 A/cm2 have been prepared by solution epitaxy. These lasers have high gain and a low temperature coefficient of the threshold up to the highest temperatures measured, 380 °K.
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Panish et al. (1970) studied this question.
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