We demonstrate a pin reflection modulator consisting of a 50-period strained layer Ga0.85In0.15As/GaAs multiple quantum well and a 5-period AlAs/GaAs quarter-wave stack dielectric mirror, grown on a GaAs substrate by molecular beam epitaxy. We observed a relative change in the reflectivity of the modulator of 12% with 4.5 V reverse bias voltage and at 0.996 μm wavelength.
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Dobbelaere et al. (1988) studied this question.
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