Stripe-geometry AlxGa1−xAs-GaAs quantum well lasers via hydrogenation

Data are presented on stripe-geometry gain-guided AlxGa1−xAs-GaAs quantum well heterostructure lasers fabricated via masked (SiO2) hydrogen compensation (‘‘hydrogenation’’) of the Mg and Se dopants in the multiple layer heterostructure. Continuous room-temperature laser operation is achieved with a threshold current of 24 mA and 24 mW total output at 50 mA. Near-field emission patterns show strong current confinement in the stripe-active region, and significant hydrogenation ‘‘undercutting’’ of the oxide mask.