Enhanced degradation and deep-level formation at dislocations in GaAs0.6P0.4 LED’s

Spatially resolved measurements of the red (1.9 eV) and infrared (1.27 eV) luminescence, resulting from near-edge and deep-level recombinations, respectively, are presented. The samples are excited by current injection at 300 K and measured before and after a period of stressed operation. An enhanced degradation is observed at distinct lines running parallel to 〈110〉 directions which is combined just there with an increasing density of the deep-level recombination centers.