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October 15, 1973Applied Physics Letters

Defect structure introduced during operation of heterojunction GaAs lasers

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Authors

PPP. M. PetroffLinköping UniversityRHR. L. HartmanPortland State University

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Implication

Microscopic investigation reveals operation-induced dislocation networks in GaAs–GaAlAs lasers, indicating a climb mechanism drives rapid degradation.

Key Points

  • Identify the structural nature and origin of defects causing rapid operational degradation in stripe geometry GaAs–GaAlAs double-heterostructure lasers.
  • Examined degraded stripe geometry GaAs–GaAlAs double-heterostructure lasers using transmission electron microscopy.
  • Degradation is driven by a three-dimensional dislocation network originating from a defect crossing the GaAlAs and GaAs epilayers.
  • The dislocation network propagates during device operation via an active climb mechanism.

Cite This Study

Petroff et al. (1973) studied this question.

synapsesocial.com/papers/6a6f2c0cb27f15817826e482https://doi.org/10.1063/1.1654962
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