What question did this study set out to answer?

Determine the cause of rapid degradation in GaAs double-heterostructure junction lasers and develop a fabrication method to mitigate device failure.

August 1, 1973Applied Physics Letters

Strain-induced degradation of GaAs injection lasers

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Authors

RHR. L. HartmanPortland State University AHA.R. HartmanLuleå University of Technology

Discussion

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Implication

Experimental study demonstrates bonding-induced strain causes rapid degradation in GaAs junction lasers, indicating that low-strain fabrication enhances continuous-wave device longevity.

Key Points

Determine the cause of rapid degradation in GaAs double-heterostructure junction lasers and develop a fabrication method to mitigate device failure.
Conducted birefringence studies on GaAs double-heterostructure junction lasers to evaluate strain fields caused by thermal-expansion mismatches during bonding.
Developed a modified bonding procedure and categorized lasers produced with both standard and new techniques into low-, moderate-, or high-strain groups.
Measured continuous-wave (cw) operational lifetimes of categorized lasers at room temperature.
Identified substantial strain fields introduced by differential thermal-expansion coefficients during standard bonding as the primary driver of rapid laser degradation.
Observed a direct correlation between low-strain categorization and extended room-temperature cw laser lifetime.
Demonstrated that lasers manufactured with the low-strain bonding procedure operated continuously at room temperature for up to 880 hours.

Cite This Study

Hartman et al. (1973) studied this question.

synapsesocial.com/papers/6a6f2c0cb27f15817826e485 https://doi.org/10.1063/1.1654838

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August 1, 1973Applied Physics Letters

Strain-induced degradation of GaAs injection lasers

View Full Paper

Ask AI

Bookmark

Authors

RHR. L. HartmanPortland State University AHA.R. HartmanLuleå University of Technology

Discussion

Member takes

Implication

Experimental study demonstrates bonding-induced strain causes rapid degradation in GaAs junction lasers, indicating that low-strain fabrication enhances continuous-wave device longevity.

Key Points

Determine the cause of rapid degradation in GaAs double-heterostructure junction lasers and develop a fabrication method to mitigate device failure.
Conducted birefringence studies on GaAs double-heterostructure junction lasers to evaluate strain fields caused by thermal-expansion mismatches during bonding.
Developed a modified bonding procedure and categorized lasers produced with both standard and new techniques into low-, moderate-, or high-strain groups.
Measured continuous-wave (cw) operational lifetimes of categorized lasers at room temperature.
Identified substantial strain fields introduced by differential thermal-expansion coefficients during standard bonding as the primary driver of rapid laser degradation.
Observed a direct correlation between low-strain categorization and extended room-temperature cw laser lifetime.
Demonstrated that lasers manufactured with the low-strain bonding procedure operated continuously at room temperature for up to 880 hours.

Cite This Study

Hartman et al. (1973) studied this question.

synapsesocial.com/papers/6a6f2c0cb27f15817826e485 https://doi.org/10.1063/1.1654838

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