Extremely low threshold current strained InGaAs/AlGaAs lasers by molecular beam epitaxy

This is the authors' abstract. We don't add key points for this paper.

Using solid source molecular beam epitaxy we have grown strained layer InGaAs/AlGaAs graded index separate confinement heterostructure lasers operating at 1.01 μm. For broad-area, uncoated Fabry–Perot devices with cavity lengths in excess of 3000 μm, the threshold current density is 56 A/cm2, a value which we believe to be the lowest ever reported for laser diodes in any materials system. The internal quantum efficiency for these lasers is 88%, while the materials losses are 1.8 cm−1.