Laboratory investigation reveals localized dark-line formation in stripe-geometry gallium arsenide lasers, indicating a crystallographic defect-driven failure mechanism at room temperature.
Identification of a major failure mechanism in stripe-geometry proton-bombarded double-heterojunction lasers is reported. This mechanism consists of the formation of localized "dark lines" in the optical cavity, coinciding with a decrease in light output. The dark lines are aligned in 〈100〉 crystallographic directions.
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Loach et al. (1973) studied this question.
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