Simple mathematical model of shift of threshold voltage induced in an m.o.s. transistor by testing at elevated temperatures

Tests of a simple m.o.s. integrated circuit at elevated temperatures have previously exposed substantial negative shifts of threshold voltage in those transistors operated at a negative gate voltage. Some of the results presented in an earlier paper are now reprocessed to yield a simple mathematical model of the shift observed on one of the transistors. The model provides an improved basis for the prediction of long-term trends under the stresses of normal service life.