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October 1, 1986Japanese Journal of Applied Physics

Low-Temperature Growth of GaAs and AlAs-GaAs Quantum-Well Layers by Modified Molecular Beam Epitaxy

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Authors

YHYoshiji HoríkoshiWaseda UniversityMKMinoru KawashimaShimizu (Japan)HYHiroshi YamaguchiNTT Basic Research Laboratories

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Horíkoshi et al. (1986) studied this question.

synapsesocial.com/papers/6a6f2c8d2163a0a01bc38184https://doi.org/10.1143/jjap.25.l868
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