Analysis of dark-line defect growth suppression in InxGa1−xAs/GaAs strained heterostructures

The driving force of 〈100〉 dark-line defect (DLD) climbing growth based on vacancy unsaturation is discussed. In InxGa1−xAs/GaAs strained structures, it is found that compressive strain can reduce the osmotic (climb) force and can suppress the climb of DLDs in 〈100〉 direction. The percentage of indium in InxGa1−xAs/GaAs strained heterostructures for the suppression of 〈100〉 DLD propagation is calculated under different material growth temperatures and doping levels. For an n-type doping level higher than 5×1016 cm−3, an indium percentage less than approximately 9% in InxGa1−xAs/GaAs heterostructures is sufficient to stop the 〈100〉 DLDs growth and agrees well with the experimental observation. These results are useful for the design and fabrication of high reliability strained heterostructure devices.