Synapse
⌘+K
Synapse
PulseExploreClubsResearchersJournals
Instagram
HomeClubsExplore
August 1, 1990IEEE Photonics Technology Letters

Inhibited dark-line defect formation in strained InGaAs/AlGaAs quantum well lasers

View Full Paper
Ask AI
Bookmark
Share

Authors

RWR. G. WatersJames S. McDonnell FoundationDBD. P. BourGoogle (United States)SYS.L. YellenJames S. McDonnell Foundation

Discussion

Loading...

Member takes

Implication

Key Points

Key points are not available for this paper at this time.

Cite This Study

Waters et al. (1990) studied this question.

synapsesocial.com/papers/6a6f2c9d5d37378ac1dc400chttps://doi.org/10.1109/68.58039
View Full Paper
Ask AI
Bookmark
Share

Also Consider

Synapse has enriched 5 closely related papers on similar clinical questions. Consider them for comparative context:

  1. 1Degradation of III–V Opto‐Electronic Devices1988 · 120 citations
  2. 2Rapid degradation phenomenon in heterojunction GaAlAs–GaAs lasers1974 · 170 citations
  3. 3Low degradation rate in strained InGaAs/AlGaAs single quantum well lasers1990 · 63 citations
  4. 4Dark-line observations in failed quantum well lasers1988 · 17 citations
  5. 5Degradation kinetics of GaAs quantum well lasers1989 · 17 citations