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We report, for the first time, the identification of extrinsic dislocation loops lying on the {100} planes with 1/2〈100〉 types of Burgers vectors in a zinc blende structure in InGaAsP lattice matched to InP. These dislocation loops generated only in nonradiative recombination assisted point-defect motion process under intensed laser light, and form the 〈100〉 type dark line defects in degraded 1.3 μm wavelength laser diodes.
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Chu et al. (1990) studied this question.
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