Nature of optically induced defects in Ga1−xAlxAs–GaAs double-heterojunction laser structures

It is shown by transmission electron microscopy (TEM) investigation that the dark line defect (DLD) structure induced by optical pumping of undoped Ga1−xAlxAs–GaAs double-heterostructure (DH) laser material is identical to the DLD's which develop during laser diode operation of devices fabricated from similar p-n structure material. This confirms the DLD generation, and subsequent failure of cw laser diodes can be a growth-related property of Ga1−xAlxAs–GaAs DH laser material and is not necessarily associated with p-n junction dopants or contact metallization technology.