Epitaxial growth of (100)CdTe on (100)GaAs induced by pulsed laser evaporation

Epitaxial (100) CdTe films were grown on the (100) GaAs surface by pulsed laser evaporation. The growth was achieved on substrates held at 260 °C and under a pressure of about 8×10−8 Torr. High-energy electron diffraction, x-ray diffraction, and UV reflectivity studies have shown that epilayers of high crystalline quality were obtained. The surface morphology of films thicker than about 0.4 μm approached atomic smoothness. No incorporated impurities, including oxygen and carbon, were found by Auger electron spectroscopy in the films studied.