Electron paramagnetic resonance studies on several donor- and acceptor-doped, oxygen-rich, silicon samples have been performed. The intensity of the spectrum Si-NL10 has been investigated as a function of heat-treatment time, temperature, and illumination. The results provide evidence for an acceptor character of the Si-NL10 center strongly supporting the recently proposed idea of relating it to the silicon thermal donor level TD^-.
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Bekman et al. (1988) studied this question.
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