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January 1, 1994IEEE Transactions on Electron Devices

Drastic reduction of gate leakage in InAlAs/InGaAs HEMT's using a pseudomorphic InAlAs hole barrier layer

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CHC. HeedtUniversity of Duisburg-EssenFBFred BuchaliNokia (Italy)WPW. ProstUniversity of Duisburg-Essen

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Heedt et al. (1994) studied this question.

synapsesocial.com/papers/6a6f2d3d2163a0a01bc382b4https://doi.org/10.1109/16.324575
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