A review of the basic features of photodetectors including p-i-n and avalanche types is presented. At the present time silicon devices for use in the 0.8-0.9-µm region have been successfully developed and are readily available. Present efforts are aimed at developing devices for use in the 1.3-1.6-µm region where improved fiber performance is possible.
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R. G. Smith (1980) studied this question.
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