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April 1, 1980IEEE Electron Device Letters

Planar type vapor-phase epitaxial In0.53Ga0.47As photodiode

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Authors

NSNobuhiko SusaHitachi (Japan)YYY. YamauchiNTT Basic Research LaboratoriesHAHiroaki AndoAichi Medical University

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Susa et al. (1980) studied this question.

synapsesocial.com/papers/6a6f762ee71d69abee08079dhttps://doi.org/10.1109/edl.1980.25228
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